Application of the hottest virtual instrument in m

2022-07-25
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The application of virtual instrument in memory characteristictesting of storage componentyu Cheng Fang; YU Hui-hua; TANG Ting-ao

(dan University, Shanghai 200433, China)Abstract The application of virtual instrument (VI) in memory component testing is described in this paper. The general transformer testing instrument can't be used to test its storage characteristic because the memory performance of memory component requires it can be read out repeatedly after once writing into S; 2. The export volume of China's plastic machinery is increasing This paper focuses on the methodology of utilizing VI to t (3) establish three systems EST memorization characteristic of storage component It is very flexible to realize the VI functions by software programming when the basic hardware is fixed. So, the VI tester can be used for different storage components so long as doing some software modification.

Key words storage component; virtual instrument; front panel; In recent years, with the development of semiconductor materials, processes and integrated circuit technology, the research of various new memory components has attracted people's attention. As a memory element, its main performance is memory characteristics. Therefore, while studying this kind of chip, the problem of how to test the memory characteristics of these new memory elements also arises. The memory characteristic of the memory element means that the device can read out the originally written information repeatedly and correctly, that is, after writing "0", it can read out the "0" signal repeatedly, and after writing "1", it can read out the "1" signal repeatedly. Different from the characteristics of ordinary transistors or FET, the writing operation of storage elements must be one-time, that is, the information can be read out repeatedly after one-time writing. For nonvolatile devices, it is required that the original information can be read out when the power is again supplied even after the information is written. The commonly used transistor characteristic tester is designed according to the requirements of testing common devices. The excitation signal sent out when testing the characteristics of devices is a repeated signal. Therefore, if it is used for testing, no matter what is written or read out, it is a repeated operation, and it is impossible to achieve a one-time write operation. Therefore, special test equipment must be designed according to the test requirements

2 memory characteristic test of memory elements

according to the memory characteristics of memory elements, the test can be divided into two processes: writing and reading, in which writing is divided into writing "0" and writing "1". For the storage element shown in Figure 1 (a), during writing, the d-end and S-end shall be controlled to be short circuited. When writing "0", a negative voltage shall be applied to the g-end at one time (as shown in Figure 1 (b)), and when writing "1", a positive voltage shall be applied to the g-end at one time (as shown in Figure 1 (c)). When reading, it is only necessary to add a positive voltage to the G terminal, but the read g terminal voltage should be less than the absolute value of the G terminal voltage when writing, and maintain a certain voltage difference. The "0" or "1" signal originally written can be distinguished by testing the voltage at terminal D (as shown in Figure 1 (d)). According to the test requirements, the equipment shall have two functions: writing and reading. The automobile lightweight design materials are used: high-strength steel, light alloy and composite materials. The writing is divided into writing "0" and writing "1". 2.1 test of writing function according to the requirements of Figure 1 (b) and figure 1 (c), when selecting the writing function, the d-end and S-end of the tested device shall be short circuited, and the voltage at g-end shall be provided. This voltage shall be adjustable as required to test the writing performance. When writing "0", provide negative g-terminal voltage, with the range of 0 ~ -10v; When writing "1", provide positive g-terminal voltage, with the range of 0 ~ +10v. 2.2 test of readout function according to the requirements of Figure 1 (d), when selecting the readout function, the power supply voltage and g-terminal voltage shall be applied to the tested device, and the memory function shall be determined through the test of d-terminal voltage. The power supply voltage and g-terminal voltage provided shall be adjustable as required to debug the performance. The voltage range is 0 ~ +10v, and the voltage at terminal g should maintain a certain voltage difference with the voltage at terminal g when writing. 2.3 signal required by the above test (1) amplitude controllable g-terminal voltage VG (output): the duration of this voltage during writing shall not be less than 1 μ s; The voltage range when writing "0" is 0 ~ -10v, and the voltage range when writing "1" is 0 ~ +10v. By changing this voltage, the required write "0" or write "1" level of the device can be tested. This voltage range is 0 ~ +10v when reading, and there should be a certain voltage difference with the absolute value of the voltage at g-end when writing, which should be evenly smeared with butter on the back of the measurement and tightly coupled with the platform to press out the middle air. The readout voltage required by the device can be tested by changing the g-terminal voltage. (2) Voltage Vcc (output) with controllable amplitude: it is generated only during reading, and the range is 0 ~ +10v. By changing the supply voltage, the readout characteristics of the device under different supply voltages can be tested

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